Details about PhD in Development of Silicon Carbide (SiC) High Power Devices at University of Warwick 2020
PhD in Development of Silicon Carbide (SiC) High Power Devices at University of Warwick 2020 is offered for PhD degree in the field of Engineering. You can apply to this scholarship here. The deadline for the sending your application is Deadline varies. This scholarship is provided by University of Warwick and the value of this scholarship is Full Funding, Full University fees and a maintenance allowance ( fees-only award for EU citizens) . This scholarship is open for: Open to all nationals.
- Degree: PhD
- Provided by: University of Warwick
- Deadline: Deadline varies
- Scholarship value: Full Funding, Full University fees and a maintenance allowance ( fees-only award for EU citizens)
Eligibility for PhD in Development of Silicon Carbide (SiC) High Power Devices at University of Warwick 2020:
- Applicants should have (or expect to obtain by the start date) at least a good 2.1 degree (and preferably a Masters degree) in Electrical Engineering or Physical Sciences or equivalent from an overseas institution.
- The candidate will be expected to have a background / keen interest in modeling and experimental investigation of solid-state devices.
- Overseas students are not eligible for this Studentship and should not apply.
Value of PhD in Development of Silicon Carbide (SiC) High Power Devices at University of Warwick 2020:
- The PhD in Development of Silicon Carbide (SiC) High Power Devices at University of Warwick 2020 studentship will pay full University fees and a maintenance allowance for UK students. EU citizens are eligible for a fees-only award.
If you are successful at the interview you will be required to submit a formal application for study and fulfill the entry requirements set by the University of Warwick.
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